| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition from which a fine negative photoresist pattern free of troubles such as surface roughness, bridge defects and sub resolution can be formed, and to provide a method for forming a pattern using the composition. <P>SOLUTION: A composition for forming a fine pattern is to be used for miniaturizing a pattern by thickening a resist pattern in a process of forming a negative resist pattern using a chemically amplified resist composition. The composition for forming a fine pattern comprises a polymer having a repeating unit containing any one of structures of the formulas (A), (B), and (C), and a solvent. A fine pattern is formed by applying and heating the composition on a negative photoresist pattern that is obtained by developing with an organic solvent developing solution. <P>COPYRIGHT: (C)2013,JPO&INPIT |
