| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of suppressing optical interference. <P>SOLUTION: A solid-state imaging element 30 is configured to have a semiconductor base substance 31, and a first semiconductor layer 32 formed on a first principal surface of the semiconductor base substance 31 and containing Ge. The solid-state imaging element 30 also has a transfer transistor Tr1 formed on a second principal surface of the semiconductor base substance 31, and a photodiode 33 formed in a region including the first semiconductor layer 32. <P>COPYRIGHT: (C)2013,JPO&INPIT |
