PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION ARRAY AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a technique for preventing a reverse current of a p-n junction having a photoelectric conversion function from becoming as large as a reverse current of a Schottky junction.

SOLUTION: A photoelectric conversion device at least comprises: a p-n junction having a photoelectric conversion function; and a field-effect transistor. When one semiconductor region of the p-n junction to which a source of the field-effect transistor is connected becomes a zero potential or a reverse-biased potential with respect to the other semiconductor region, saturation control is performed, by supplying a gate potential with which the field-effect transistor is brought into conduction, such that the p-n junction is not biased to a deep forward voltage even if light is emitted onto either one of the two semiconductor regions of different conductivity types.

COPYRIGHT: (C)2013,JPO&INPIT