发明名称 |
Multi-Fin Device by Self-Aligned Castle Fin Formation |
摘要 |
The present disclosure provides a method includes forming a multi-fin device. The method includes forming a patterned mask layer on a semiconductor substrate. The patterned mask layer includes a first opening having a first width W1 and a second opening having a second width W2 less than the first width. The patterned mask layer defines a multi-fin device region and an inter-device region, wherein the inter-device region is aligned with the first opening; and the multi-fin device region includes at least one intra-device region being aligned with the second opening. The method further includes forming a material layer on the semiconductor substrate and the patterned mask layer, wherein the material layer substantially fills in the second opening; performing a first etching process self-aligned to remove the material layer within the first opening such that the semiconductor substrate within the first opening is exposed; performing a second etching process to etch the semiconductor substrate within the first opening, forming a first trench in the inter-device region; and thereafter performing a third etching process to remove the material layer in the second opening.
|
申请公布号 |
US2013113023(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213724709 |
申请日期 |
2012.12.21 |
申请人 |
TAIWAN MANUFACTURING COMPANY, LTD;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
CHEN HSIN-CHIH;LEE TSUNG-LIN;YUAN FENG |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|