| 发明名称 |
METHOD FOR DOPING A SEMICONDUCTOR MATERIAL |
| 摘要 |
A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
|
| 申请公布号 |
US2013115762(A1) |
申请公布日期 |
2013.05.09 |
| 申请号 |
US201113810622 |
申请日期 |
2011.07.01 |
| 申请人 |
FORSTER MAXIME;FOURMOND ERWANN;STADLER JACKY;EINHAUS ROLAND;LAUVRAY HUBERT;SILTRONIX;APOLLON SOLAR |
发明人 |
FORSTER MAXIME;FOURMOND ERWANN;STADLER JACKY;EINHAUS ROLAND;LAUVRAY HUBERT |
| 分类号 |
H01L21/324 |
主分类号 |
H01L21/324 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
