| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wiring structure for a display device, which does not generate hillock even when exposed to the high temperature of approximately 450-600°C, is superior in high-temperature heat resistance, in which the electric resistance (wiring resistance) of whole wiring structure is suppressed low, and furthermore, which is superior in hydrofluoric acid resistance. <P>SOLUTION: The wiring structure for the display device has a surface layer structure having a first layer of an Al alloy containing at least one element selected from the group (X group) consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr and Pt, and at least one rare-earth element; and a second layer of a nitride of at least one element selected from the group (Y group) consisting of Ti, Mo, Al, Ta, Nb, Re, Zr, W, V, Hf and Cr, or a nitride of an Al alloy, laminated in this order from a substrate side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
