发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To reduce manufacturing costs of a semiconductor device, to improve the aperture ratio of a semiconductor device, to make a display portion of a semiconductor device display a higher-definition image, and to provide a semiconductor device which can be operated at high speed. <P>SOLUTION: The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed of a metal and a channel layer is formed of an oxide semiconductor; and a driver circuit wiring formed of a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed of an oxide conductor and a semiconductor layer is formed of an oxide semiconductor; and a display wiring formed of an oxide conductor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013084964(A) |
申请公布日期 |
2013.05.09 |
申请号 |
JP20120257016 |
申请日期 |
2012.11.26 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;MIYAKE HIROYUKI;KUWABARA HIDEAKI |
分类号 |
H01L21/336;G02F1/1368;H01L21/28;H01L21/8234;H01L27/08;H01L27/088;H01L29/417;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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