发明名称 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH OUTER LEADS HAVING A LEAD-FREE PLATING
摘要 A semiconductor device has a tab having a semiconductor chip fixed thereto, a plurality of inner leads, a plurality of outer leads formed integrally with the inner leads, a plurality of wires coupling the electrode pads of the semiconductor chip to the inner leads, and a molded body having the semiconductor chip molded therein. Over a surface of each of the outer leads protruding from the molded body, an outer plating including lead-free platings is formed. The outer plating has, in a thickness direction thereof, a first lead-free plating and a second lead-free plating, the first and second lead-free platings having the same composition and meeting at an interface. The first and second lead-free platings are formed under different conditions and may have different physical properties.
申请公布号 US2013115737(A1) 申请公布日期 2013.05.09
申请号 US201213730200 申请日期 2012.12.28
申请人 RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION 发明人 MURAKAMI TOMOHIRO
分类号 H01L23/00 主分类号 H01L23/00
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