NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for manufacturing the same are provided to prevent a short circuit between common bit lines by misaligning a common bit line with an adjacent bit line. CONSTITUTION: An active region(200a) includes a string part(S) extended in a first direction and a bridge part(B) connecting an adjacent string part. A field region(200b) is formed between the active regions. A selection transistor and a memory cell are formed on the active region. Bit line contacts(240a,240b) are misaligned in a first direction and a second direction which is perpendicular to the first direction. A common bit line is connected to the bit line contacts.