HIGH EFFICIENCY AND/OR HIGH POWER DENSITY WIDE BANDGAP TRANSISTORS

摘要

PROBLEM TO BE SOLVED: To provide field effect transistors having a power density of 40 W/mm or greater when operated at a frequency of at least 4 GHz.

SOLUTION: A field effect transistor comprises: a Group III-nitride channel layer 16; a gate electrode 24 on the Group III-nitride channel layer 16; a source electrode 20; a drain electrode 22; an insulating layer 72 on the gate electrode 24; and a field plate 74 which is on the insulating layer 72 and electrically coupled to the source electrode 20.

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