| 发明名称 |
METHOD FOR GROWING &bgr;-Ga2O3-BASED SINGLE CRYSTAL |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal capable of suppressing twinning effectively. <P>SOLUTION: In production of a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal by EFG (Edge-defined film-fed growth) method, the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal is grown in a direction parallel to its (101) plane, and an angle ϕ (0°≤ϕ<90°) formed between the <10-1> direction in the (101) plane and the growth direction is <90°. Even in the case of using another crystal growth method such as FZ (Floating Zone) method, twinning of the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal 25 can be suppressed effectively. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013082587(A) |
申请公布日期 |
2013.05.09 |
| 申请号 |
JP20110224243 |
申请日期 |
2011.10.11 |
| 申请人 |
TAMURA SEISAKUSHO CO LTD;KOHA CO LTD |
发明人 |
KOSHI KIMIYOSHI;WATANABE SHINYA;SASAKI KOHEI;YAMAOKA MASARU;UJIIE TAKEKAZU |
| 分类号 |
C30B29/16;C30B13/00;C30B15/34 |
主分类号 |
C30B29/16 |
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