发明名称 |
Methods of Fabricating Semiconductor Devices |
摘要 |
Provided are methods of fabricating a semiconductor device that include providing a substrate that includes a first region having a gate pattern and a second region having a first trench and an insulating layer that fills the first trench. A portion of a sidewall of the first trench is exposed by etching part of the insulating layer and a first spacer is formed on a sidewall of the gate pattern. A second spacer is formed on the exposed sidewall of the first trench, wherein the first spacer and the second spacer are formed simultaneously.
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申请公布号 |
US2013115759(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213561245 |
申请日期 |
2012.07.30 |
申请人 |
PARK SANG-JINE;KWON KEE-SANG;YUN DOO-SUNG;YOON BO-UN;HAN JEONG-NAM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-JINE;KWON KEE-SANG;YUN DOO-SUNG;YOON BO-UN;HAN JEONG-NAM |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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