发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The present invention provides a semiconductor device structure and a method for manufacturing the same. The method comprises: providing a semiconductor substrate, forming a first insulating layer on the surface of the semiconductor substrate; forming a shallow trench isolation embedded in the first insulating layer and the semiconductor substrate; forming a stripe-type trench embedded in the first insulating layer and the semiconductor substrate; forming a channel region in the trench; forming a gate stack line on the channel region and source/drain regions on opposite sides of the channel region. Embodiments of the present invention are applicable to manufacture of semiconductor devices.
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申请公布号 |
US2013113025(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201113131745 |
申请日期 |
2011.02.25 |
申请人 |
ZHONG HUICAI;LIANG QINGQING;INSTITUTE OF MICROLECTRONICS, CHINESSE ACADEMY OFSCIENCES |
发明人 |
ZHONG HUICAI;LIANG QINGQING |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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