| 摘要 |
The photoelectric conversion device of the present invention is a photoelectric conversion device which includes a substrate on which the following are layered in the order listed below: a lower electrode layer; a photoelectric conversion semiconductor layer which includes, as a major component, at least one kind of compound semiconductor having a chalcopyrite structure formed of a group Ib element, a group IIIb element, and a group VIb element; a buffer layer; and a transparent conductive layer, in which the buffer layer includes a ternary compound of a cadmium-free metal, oxygen, and sulfur, and a has a carbonyl ion on a surface facing the transparent conductive layer.
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