| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device allowing the line width of a lead-out section to be equal to that of a wiring section even when the space of the lead-out section is wider than that of the wiring section. <P>SOLUTION: The method of manufacturing a semiconductor device comprises forming, by processing a processed film 5 by using sidewall patterns 2a and 2b and dummy sidewall patterns 2c and 2d as masks, wiring corresponding to the sidewall pattern 2a in a wiring section R1 on a foundation layer 4, and forming a leading-out line 5b corresponding to the sidewall pattern 2b in a lead-out section R2 on the foundation layer 4, so that, in the lead-out section R2 on the foundation layer 4, a dummy leading-out line 5c corresponding to the dummy sidewall pattern 2c is formed in parallel to the leading-out line 5b and a dummy leading-out line 5d corresponding to the dummy sidewall pattern 2d is formed in parallel to the leading-out line 5b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
