| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form a nickel monosilicide layer featuring low resistance and excellent surface smoothness on a silicon layer. <P>SOLUTION: The semiconductor device manufacturing method includes a step S05 which is a step of depositing a nickel layer containing platinum so as to cover a silicon layer formed on a substrate, in which the platinum-containing nickel layer is deposited in such a way that a portion of it close to the silicon layer is low in crystallinity than the other portion far therefrom, and a step S07 in which a nickel monosilicide layer is formed in the interface between the silicon layer and the platinum-containing nickel layer by heating the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
