| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon substrate and manufacturing method, suitable for a semiconductor device thinned and subjected to back-surface grinding or polishing in a device post-process. <P>SOLUTION: There is provided a silicon substrate and manufacturing method, in which the silicon substrate having devices formed thereon is thinned in a device post-process, and a back surface side of the substrate is heated on a non-melting condition to reduce residual stress on the back surface side to allow reduction in chip strength to be suppressed to improve yield, while preventing diffusion of heavy metal to a device active layer side to allow device characteristics to remain. <P>COPYRIGHT: (C)2013,JPO&INPIT |
