| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflective mask blank capable of producing a reflective mask having an absorber film excellent in an optical characteristic and has a high accuracy transfer pattern by using a reflective mask blank in which an absorber film of a tantalum-based material and an etching mask film of a chromium-based material are stacked. <P>SOLUTION: A reflective mask blank 100 provided to be used for producing a reflective mask has a structure in which a multi-layer reflective film 5, an absorber film 2 and an etching mask film 3 are layered on a substrate 1 in this order. In the mask blank, the etching mask film is formed by a material containing chrome, an absorber film is formed by a material containing tantalum, and a high oxide layer 22 is formed on a surface opposite to a substrate side of the absorber film. In the high oxide layer, a narrow spectrum of Ta4f when performing x-ray electron spectral analysis has a maximum peak with bound energy greater than 23 eV. <P>COPYRIGHT: (C)2013,JPO&INPIT |
