| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode having a high light emission ratio. <P>SOLUTION: A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, an active layer, a plurality of three-dimensional nanostructures, a first electrode, and a second electrode. The plurality of three-dimensional nanostructures are installed on a surface of a substrate in a one-dimensional array format. The three-dimensional nanostructure includes a first protrusion and a second protrusion. The first protrusion and the second protrusion extend in parallel with each other in the same direction. A first groove is formed between the first protrusion and second protrusion of the three-dimensional nanostructure. A second groove is formed between adjacent three-dimensional nanostructures. The second groove has a depth deeper than the first groove. <P>COPYRIGHT: (C)2013,JPO&INPIT |
