发明名称 METHOD FOR TREATING SURFACE OF SILICON WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SOLAR CELL
摘要 <P>PROBLEM TO BE SOLVED: To form a porous layer of a nanostructure on a surface of a silicon substrate (Si wafer) by making a solution containing no catalyst metal such as platinum act. <P>SOLUTION: A surface of an Si wafer is treated by a step of making at least one aqueous solution containing ammonia and selected from a group of hydrogen peroxide act on the surface of the Si wafer, thereby forming a fine porous layer of a nanostructure on the surface of the Si wafer. Thus, a reflectance in a visible light region on the surface of the Si wafer can be reduced to 5-8%. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013084835(A) 申请公布日期 2013.05.09
申请号 JP20110224636 申请日期 2011.10.12
申请人 KOBAYASHI HIKARI 发明人 KOBAYASHI HIKARI
分类号 H01L21/308;H01L31/04 主分类号 H01L21/308
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