| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film forming method that can form a thin film such as an impurity-containing silicon film in an amorphous state which is preferable in embedding property even at a relatively low temperature and is improved in accuracy of surface roughness. <P>SOLUTION: A thin film forming method which forms a seed film 88 and the impurity-containing silicon film 90 on a surface of an object W to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container. <P>COPYRIGHT: (C)2013,JPO&INPIT |
