NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To allow for obtaining a sufficient breakdown voltage in a nitride semiconductor device in which uses GaN in a state where an interface due to recrystallization growth or the like does not exist in a path in which current flows.

SOLUTION: A nitride semiconductor device comprises: a channel layer (second semiconductor layer) 101 composed of GaN; a first barrier layer (first semiconductor layer) 102 formed on an N polar surface which is one surface of the channel layer 101; and a second barrier layer (third semiconductor layer) formed on a group III polar surface which is the other surface of the channel layer 101. The first barrier layer 102 and the second barrier layer 103, for example, are composed of AlGaN. A drain electrode (first electrode) 104 is formed on the first barrier layer 102, and a gate electrode 105 is formed on the second barrier layer 103 so as to face the drain electrode 104. A source electrode (second electrode) 106 is formed on the second barrier layer 103 apart from the gate electrode 105.

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