发明名称 |
SELF-LEVELING PLANARIZATION MATERIALS FOR MICROELECTRONIC TOPOGRAPHY |
摘要 |
Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.
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申请公布号 |
US2013113086(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213672527 |
申请日期 |
2012.11.08 |
申请人 |
BREWER SCIENCE INC.;BREWER SCIENCE INC. |
发明人 |
BAI DONGSHUN;SHAO XIE;FOWLER MICHELLE;TANG TINGJI |
分类号 |
H01L21/3105;H01L21/31;H01L29/02 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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