发明名称 SELF-LEVELING PLANARIZATION MATERIALS FOR MICROELECTRONIC TOPOGRAPHY
摘要 Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.
申请公布号 US2013113086(A1) 申请公布日期 2013.05.09
申请号 US201213672527 申请日期 2012.11.08
申请人 BREWER SCIENCE INC.;BREWER SCIENCE INC. 发明人 BAI DONGSHUN;SHAO XIE;FOWLER MICHELLE;TANG TINGJI
分类号 H01L21/3105;H01L21/31;H01L29/02 主分类号 H01L21/3105
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