| 发明名称 |
SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER |
| 摘要 |
A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.
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| 申请公布号 |
US2013112275(A1) |
申请公布日期 |
2013.05.09 |
| 申请号 |
US201113290404 |
申请日期 |
2011.11.07 |
| 申请人 |
HEKMATSHOAR-TABARI BAHMAN;KHAKIFIROOZ ALI;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEKMATSHOAR-TABARI BAHMAN;KHAKIFIROOZ ALI;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
| 分类号 |
H01L31/0264;H01L31/18 |
主分类号 |
H01L31/0264 |
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