| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of securing breakdown voltage without focusing an electric field in a peripheral region, in a structure that secures breakdown voltage in the peripheral region. <P>SOLUTION: In a cell region 1, a source electrode 12 of MOSFET is provided. In a peripheral region 2, an outermost peripheral electrode 21 that is located around a charge balance change region 27 and electrically connected with a semiconductor substrate 6. In the peripheral region 2, a p-type layer 7 is formed on a super junction structure and a potential division region 23 for electrically connecting the source electrode 12 and outermost peripheral electrode 21 and dividing the voltage between the source electrode 12 and outermost peripheral electrode 21 into a plurality of stages is provided on the p-type layer 7. At least part of the potential division region 23 overlaps with the peripheral region 2 and preferably with the charge balance change region 27 when viewed in the thickness direction of the semiconductor substrate 6. <P>COPYRIGHT: (C)2013,JPO&INPIT |
