发明名称 METHOD AND APPARATUS FOR CLEANING SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for cleaning a substrate, capable of preventing a water mark from remaining on a silicon surface, and contributing to space saving of the cleaning apparatus. <P>SOLUTION: A method for cleaning a substrate includes: conveying a wafer to a hydrofluoric acid tank 4 and subjecting the wafer to wet etching using an HF solution in the hydrofluoric acid tank 4 to expose a silicon surface of the wafer; conveying the wafer to a pure water rinse tank 5 to rinse the wafer in the pure water rinse tank 5; conveying the wafer to a drying device 6 to dry the wafer in the drying device 6; after the etching using the HF solution and the rinsing and the drying of the wafer, conveying the wafer to an alkaline tank 2 to subject the wafer to alkaline cleaning in the alkaline tank 2 to form a thin chemical oxide film on the silicon surface; and conveying the wafer to a pure water rinse tank 3 to rinse the wafer in the pure water rinse tank 3. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013084723(A) 申请公布日期 2013.05.09
申请号 JP20110222905 申请日期 2011.10.07
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人 KAMEI TATSUYA;SAKUMA TOKIO
分类号 H01L21/304;H01L21/306 主分类号 H01L21/304
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