| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a display device having a high aperture ratio or a semiconductor device having an element with a large area. <P>SOLUTION: A TFT channel forming region having a multi-gate structure is provided below wiring disposed between neighboring pixel electrodes (or electrodes of an element). The channel width direction of a plurality of the channel forming regions is parallel with the length direction of the pixel electrode shape. The channel width is longer than the channel length, so that the channel forming region has a large area. <P>COPYRIGHT: (C)2013,JPO&INPIT |
