SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To improve film thickness uniformity and the like of an insulation film having a lamination structure of an oxide film and a nitride film.

SOLUTION: A semiconductor device manufacturing method comprises: a step of forming an oxide film on a substrate by performing predetermined times to a substrate heated to a first temperature in a processing container under a pressure of less than an ambient pressure, a cycle including a step of supplying a first material gas, and a step of supplying an oxidation gas and a reduction gas; a step of forming a seed layer on a surface of the oxide film by supplying a nitride gas to the substrate in the processing container, which is heated to a temperature not less than the first temperature and not more than a second temperature; and a step of forming a nitride film on the seed layer formed on the surface of the oxide film by performing predetermined times to the substrate heated to the second temperature in the processing container, a cycle including a step of supplying a second material gas, and a step of supplying a nitride gas.

COPYRIGHT: (C)2013,JPO&INPIT