发明名称 GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS, AND FORMATION METHOD OF YTTRIA CONTAINING FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a protective film inhibiting the deterioration of a coating film which is caused by shedding of yttria particles and cracks even if the coating film is formed by a material including yttria having high plasma resistance. <P>SOLUTION: According to one embodiment of this invention, a gas supply member 41 includes a gas supply passage 42 which has a gas passage 421 having a first diameter and extending in a gas flow direction and a discharge port 422 which is connected with one end part of the gas passage 421 and is provided on a surface 41A at the downstream side of the gas flow of the gas supply member 41. At least a partial surface of a surface forming the discharge port 422 is formed by a curved surface. Further, an yttria containing film 50 are provided on the surface forming the discharge port 422 and the downstream side surface 41A of the gas supply member 41. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013084997(A) 申请公布日期 2013.05.09
申请号 JP20130018418 申请日期 2013.02.01
申请人 TOSHIBA CORP 发明人 ETO HIDEO;ITO SACHIYO;IKARIYAMA RIKYU;SAITO MAKOTO
分类号 H01L21/3065 主分类号 H01L21/3065
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