| 摘要 |
PURPOSE: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to improve the light extraction efficiency and reduce the density of a penetration dislocation in a nitride epi-layer growth process. CONSTITUTION: A nitride semiconductor layer including a first conductive layer, an active layer, and a second conductive layer is positioned on a substrate. The substrate is made of sapphire, GaAs, InP, Si, SiC, or GaN. Nitride is GaN, AlGaN, GaInN, or InGaAIN. The first electrode is formed on the first conductive layer. The second electrode is formed on the second conductive layer. [Reference numerals] (AA) Existing PSS; (BB,CC) Invention PSS; (DD) Not a specific cross-section
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