SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses electric characteristic deterioration caused by moisture, and provide a semiconductor device manufacturing method.

SOLUTION: A semiconductor device comprises a structure in which a metal oxide layer is positioned in contact with an interlayer insulation layer covering a transistor. The meta oxide layer is composed of a lamination structure including a first metal oxide layer having an amorphous structure, a second metal oxide layer having a polycrystalline structure. The first metal oxide layer having the amorphous structure has no crystal grain boundary and wider grid spacing compared with a crystalline metal oxide layer and likely to trap moisture between grids. The second metal oxide layer having the polycrystalline structure has a dense structure in a crystal part except a crystal grain boundary part and exhibits extremely low moisture permeability. Because of this, moisture invasion to a transistor can be effectively prevented by the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer contacts the interlayer insulation layer.

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