| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in MEEF (mask error enhancement factor), DOF (depth of focus) and resolution, and to provide a method for forming a resist pattern using the photoresist composition. <P>SOLUTION: The photoresist composition comprises: [A] a polymer having a (meth)acrylate unit (I) having a norbornane ring with a sulfolactone ring in a side chain, a structural unit (II) including an acid dissociable group having a monocyclic alicyclic group, and a structural unit (III) including a lactone group; and [B] a radiation-sensitive acid generator. <P>COPYRIGHT: (C)2013,JPO&INPIT |
