发明名称 HIGH RESOLUTION PIXEL ARCHITECTURE
摘要 A pixel structure comprises a substantially transparent substrate, a drive transistor formed on the substrate, an organic light emitting device formed on the opposite side of the drive transistor from the substrate, a reflective layer disposed between the light emitting device and the drive transistor and having a reflective surface facing the light emitting device. The reflective layer forms an opening offset from the drive transistor for passing light emitted by the light emitting device to the substrate. At least a portion of the reflective layer is preferably concave in shape to direct reflected light from the light emitting device back onto the light-emitting device.
申请公布号 US2013112960(A1) 申请公布日期 2013.05.09
申请号 US201213724424 申请日期 2012.12.21
申请人 IGNIS INNOVATION INC.;IGNIS INNOVATION INC. 发明人 CHAJI GHOLAMREZA;GUPTA VASUDHA;NATHAN AROKIA
分类号 H01L51/50;H01L33/60;H01L51/56 主分类号 H01L51/50
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