| 摘要 |
<p>PURPOSE: A method for fabricating an oxide/semiconductor interface is provided to form a low permittivity oxide layer between a high dielectric constant oxide and a semiconductor. CONSTITUTION: A semiconductor substrate(10) having a surface(12) is provided. An oxidation metal layer(25) is deposited on the surface of the semiconductor. The oxidation metal layer is made of high permittivity metal oxide. A high permittivity oxide layer(35) is deposited on the oxidation metal layer. A high oxidation metal oxide layer(25a) is formed between the semiconductor substrate and the high permittivity oxide layer. [Reference numerals] (10) Semiconductor(Si,Ge,IIV); (35) ALD high-permittivity(high-K) oxide</p> |
