| 摘要 |
<p>The method involves forming a portion of sacrificial material covering a portion of microelectronic device (100), where a volume of the device occupies a space to form a part of a cavity (114). A getter material layer (108) is deposited, and a part of the portion of material is covered. An orifice (112) is formed across the layer of getter material, where the orifice is formed as an access to the portion of sacrificial material. The portion of sacrificial material forming another cavity, in which the device is to be encapsulated, is eliminated via the orifice, and the latter cavity is sealed.</p> |
