发明名称 MONOLITHIC INTEGRATED CMUTS FABRICATED BY LOW-TEMPERATURE WAFER BONDING
摘要 <p>Low temperature wafer bonding (temperature of 450° C. or less) is employed to fabricate CMUTs on a wafer that already includes active electrical devices. The resulting structures are CMUT arrays integrated with active electronics by a low-temperature wafer bonding process. The use of a low-temperature process preserves the electronics during CMUT fabrication. With this approach, it is not necessary to make compromises in the CMUT or electronics designs, as is typical of the sacrificial release fabrication approach. Various disadvantages of sacrificial release, such as low process control, poor design flexibility, low reproducibility, and reduced performance are avoided with the present approach. With this approach, a CMUT array can be provided with per-cell electrodes connected to the substrate integrated circuitry. This enables complete flexibility in electronically assigning the CMUT cells to CMUT array elements.</p>
申请公布号 EP2403659(B1) 申请公布日期 2013.05.08
申请号 EP20100724911 申请日期 2010.03.05
申请人 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY 发明人 KUPNIK, MARIO;KHURI-YAKUB, BUTRUS, T.
分类号 B06B1/02 主分类号 B06B1/02
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