发明名称 TECHNOLOGY FOR REDUCING HIGH SPEED VOLTAGE NOISE IN THE METAL-INSULATOR TRANSITION DEVICE AND ELECTRONIC SYSTEM
摘要 PURPOSE: A technology for reducing ESD noise in a metal-insulator transition device and an electronic system are provided to effectively remove the static electricity of the electronic system by using a metal-insulator transition 3 terminal element. CONSTITUTION: A first semiconductor region(10) of a first conductivity functions as an outlet region. A second semiconductor region(20) of a second conductivity functions as a control region. The concentration of the second semiconductor region of the second conductivity has the moat critical concentration of the upper part of the first semiconductor region of the first conductivity. A third semiconductor region(30) of the first conductivity functions as an inlet region. An MIT 3 terminal element consists of three terminals(12,22,32) for an inlet(I), an outlet(O), and a control(C).
申请公布号 KR20130047558(A) 申请公布日期 2013.05.08
申请号 KR20120073002 申请日期 2012.07.04
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, HYUN TAK;KIM, BONG JUN;CHOI, JEONG YONG;PARK, JONG CHAN
分类号 H01L27/04;H01L23/60;H01L29/08 主分类号 H01L27/04
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