发明名称 ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TUNING OF INTEGRATED CIRCUITS
摘要 An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.
申请公布号 KR20130047775(A) 申请公布日期 2013.05.08
申请号 KR20137010577 申请日期 2008.09.19
申请人 AGERE SYSTEMS LLC 发明人 BAIOCCHI FRANK A.;CARGO JAMES T.;DELUCCA JOHN M.;DUTT BARRY J.;MARTIN CHARLES
分类号 H01L21/82;H01L27/02 主分类号 H01L21/82
代理机构 代理人
主权项
地址