发明名称 |
TRANSPARENT ELECTRODES FOR SEMICONDUCTOR THIN FILM DEVICES |
摘要 |
<p>A method of producing a transparent electrode suitable for use in an organic semiconductor photovoltaic device. First and second silanes (3) are deposited from the vapour phase on a substrate (1) and bind to the surface of the substrate. A metal film (4) is then deposited from the vapour phase and binds to both the first and second silanes so as to produce a transparent metal layer having a thickness which is no greater than about 15 nanometres. The first silane is a non-amino functional silane and the second silane is an aminofunctional silane. The electrode may be flexible, using a polymer substrate (1). The metal film (4) may be provided with a plurality of apertures (5), provided for example by masking the substrate with microspheres (2) while depositing the metal and subsequently removing the microspheres, and / or annealing the metal so that apertures appear.</p> |
申请公布号 |
EP2589093(A1) |
申请公布日期 |
2013.05.08 |
申请号 |
EP20110743128 |
申请日期 |
2011.06.30 |
申请人 |
THE UNIVERSITY OF WARWICK |
发明人 |
HATTON, ROSS, ANDREW;STEC, HELENA, MARIA;JONES, TIMOTHY, SIMON |
分类号 |
H01L51/00;H01L51/42;H01L51/44 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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