发明名称 |
PROCESSING OF MULTILAYER SEMICONDUCTOR WAFERS |
摘要 |
<p>A method and apparatus for machining, or forming a feature in, a patterned silicon wafer includes removing portions of surface layers on the wafer using a first pulsed laser (4) beam with a pulse width between 1 ps and 1000 ps; and removing portions of bulk silicon (1) underlying the surface layers from the wafer using a second pulsed laser (5) beam with a wavelength between 200 nm and 1100 nm. Re-deposited silicon may be removed from the wafer by etching.</p> |
申请公布号 |
EP2266134(B1) |
申请公布日期 |
2013.05.08 |
申请号 |
EP20090722100 |
申请日期 |
2009.03.16 |
申请人 |
ELECTRO SCIENTIFIC INDUSTRIES, INC. |
发明人 |
RODIN, ALEKSEJ;BOYLE, ADRIAN;BRENNAN, NIALL;CALLAGHAN, JOSEPH |
分类号 |
H01L21/768;B23K26/06;B23K26/40;H01L21/3213 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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