| 发明名称 |
A gallium arsenide semiconductor device having at least one rectifying contact formed by alloying |
| 摘要 |
Alloys used in the manufacture of semi-conductor devices (see Division H1) consist of gold and tin, or silver and tin in equal atomic proportions. |
| 申请公布号 |
GB983840(A) |
申请公布日期 |
1965.02.17 |
| 申请号 |
GB19610019298 |
申请日期 |
1961.05.29 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
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| 分类号 |
C30B31/04;H01L21/00;H01L21/22;H01L21/228;H01L21/48;H01L29/00;H01L29/06;H01L29/167;H01L29/207;H01L29/43;H01L29/73;H01L29/88 |
主分类号 |
C30B31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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