SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

摘要

PURPOSE: A semiconductor device and a display device are provided to selectively lower the resistance of an oxide semiconductor layer by using the hydrogen concentration of the oxide semiconductor layer for the channel formation region of a thin film transistor which is lower than that of the oxide semiconductor layer for the parasitic resistance of a resistance unit. CONSTITUTION: A resistance unit(354) uses a first oxide semiconductor layer(905) as a resistance component. One end of the first oxide semiconductor layer is connected to a first line(901) through a contact hole(904). The other end of the first oxide semiconductor layer is connected to a second line(907). A thin film transistor(355) has a gate terminal(902), a second oxide semiconductor layer(906), a second line and a third wiring(908). The second line and the third line function as a source terminal and a drain terminal.