发明名称 APPARATUS AND METHOD FOR TREATING SUBSTRATE
摘要 PURPOSE: A substrate processing apparatus and a substrate processing method are provided to efficiently remove layers on the surface of a substrate by supplying processing gases with different elements according to the materials of the layers on the surface of the substrate. CONSTITUTION: A plasma supplying unit(200) supplies a discharged source gas to a processing chamber(110) and includes a plasma chamber(210), a first source gas supplying unit, and a second source gas supplying unit. The first source gas supplying unit supplies a first source gas to a discharge space. The second source gas supplying unit supplies a second source gas to the discharge space. The second source gas is different from the first source gas.
申请公布号 KR20130047125(A) 申请公布日期 2013.05.08
申请号 KR20110111959 申请日期 2011.10.31
申请人 PSK INC. 发明人 CHAE, EUN CHEOL;KIM, TAE HOON
分类号 H01L21/3065 主分类号 H01L21/3065
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