| 摘要 |
A solid-state image sensor as an embodiment of the present invention includes: pixels (R, Gr, Gb, B, ...) arranged in columns and rows; read signal lines 301, 302, each of which is connected to pixels arranged in a row direction; and output signal lines 303, 304, each of which is connected to pixels arranged in a column direction. The read signal lines 301, 302 are classified into a first type of read signal lines 301, each of which is connected to a group of pixels on which R and B rays are incident, and a second type of read signal lines 302, each of which is connected to a group of pixels on which G rays are incident. Among pixels connected to each first type of read signal line 301, two pixels (R, B) on two adjacent columns are arranged on two opposite sides with respect to the first type of read signal line 301. Among pixels (Gr, Gb, Gr, Gb, ...) connected to each second type of read signal line 302, two pixels (Gr, Gb) on two adjacent columns are arranged on two opposite sides with respect to the second type of read signal line 302. |
