| 摘要 |
<p>The invention relates to an optoelectronic component (100), comprising at least one radiation-emitting semiconductor element (1); at least one converter element (2), which is used to convert the electromagnetic radiation emitted by the semiconductor element (1); at least one filter means (3), which comprises filter particles (31) or is formed by the same, wherein the filter means (3) scatters and/or absorbs at least one predefinable wavelength range of the electromagnetic radiation emitted by the semiconductor element (1) more strongly than a wavelength range that is different from the predefined wavelength range, and the filter particles (31) have a d50 value, measured in Q0, of at least 0.5 nm to no more than 500 nm and/or the filter particles (31) are designed at least in some areas in a thread-like manner and in a thread-like region (31A) have a diameter (D) that is at least 0.5 nm and no more than 500 nm.</p> |
