| 摘要 |
<p>PURPOSE: A semiconductor memory device is provided to reduce the occupation area of a sense amplifier and to improve the degree of integration. CONSTITUTION: A memory cell array(10) includes at least one memory cell. The memory cell is arranged in a first layer of a first area. At least one sense amplifier(20) is arranged in a second layer different from the first layer. A local interconnect via is arranged in the first area. The local interconnect via connects a cell bit line to a bit line. [Reference numerals] (10) Memory cell array</p> |
