发明名称 |
Methods of processing substrates having metal materials |
摘要 |
Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O2) and a carbohydrate. In some embodiments, a two step method with an additional second process gas comprising chlorine (Cl2) or a sulfur (S) containing gas, may provide an efficient way to remove patterned mask residue. |
申请公布号 |
US8435419(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US201113014813 |
申请日期 |
2011.01.27 |
申请人 |
DING GUOWEN;NG HERRICK;SUE TEH-TIEN;SCHWARZ BENJAMIN;LI ZHUANG;APPLIED MATERIALS, INC. |
发明人 |
DING GUOWEN;NG HERRICK;SUE TEH-TIEN;SCHWARZ BENJAMIN;LI ZHUANG |
分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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