| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to improve the reliability of the semiconductor memory device by reducing interference and disturbance. CONSTITUTION: A programming voltage generating unit(210) generates a first programming voltage for forming a first data distribution and a second programming voltage for forming a second data distribution in response to data to be stored in a programming operation. An initialization voltage generating unit(220) generates an initialization voltage with a voltage level between the first programming voltage and the second programming voltage in an initialization operation. A memory cell array(230) forms the corresponding data distribution by receiving the initialization voltage and the first and second programming voltages. [Reference numerals] (210) Programming voltage generating unit; (220) Initialization voltage generating unit; (230) Memory cell array; (240) Page buffering unit
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