| 摘要 |
PURPOSE: A semiconductor memory device and a driving method thereof are provided to improve a data processing speed by reducing tAA through a termination operation without increasing a termination circuit. CONSTITUTION: A global data line transmits data between an interface region and a core region including a plurality of memory banks. A data line driving unit(340) is arranged in the core region and drives the global data line according to the data in a data transmission operation. The data line driving unit terminates the global data line in a termination operation. A control signal generating unit(320) generates a termination control signal which is activated for a preset section before a column command signal is activated. [Reference numerals] (310) Sensing amplifier unit; (320) Control signal generating unit
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