发明名称 Method of polishing using tunable polishing formulation
摘要 A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
申请公布号 US8435420(B1) 申请公布日期 2013.05.07
申请号 US201113283013 申请日期 2011.10.27
申请人 GUO YI;REDDY KANCHARLA-ARUN KUMAR;ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 发明人 GUO YI;REDDY KANCHARLA-ARUN KUMAR
分类号 B44C1/22;C03C15/00;C03C25/68;C23F1/00 主分类号 B44C1/22
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