发明名称 |
Method of polishing using tunable polishing formulation |
摘要 |
A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
|
申请公布号 |
US8435420(B1) |
申请公布日期 |
2013.05.07 |
申请号 |
US201113283013 |
申请日期 |
2011.10.27 |
申请人 |
GUO YI;REDDY KANCHARLA-ARUN KUMAR;ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
GUO YI;REDDY KANCHARLA-ARUN KUMAR |
分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00 |
主分类号 |
B44C1/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|